Work function and energy levels of positrons in elemental semiconductors

N. Bouarissa, B. Abbar, J. P. Dufour, N. Amrane, H. Aourag

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We have studied the behaviour of the positron in diamond, silicon and germanium by calculating its energy levels at different points of the reciprocal space using the pseudopotential approach coupled with the independent particle approximation. These energies determine quantities, such as the positron and positronium work functions and the deformation potentials, which are important parameters in slow-positron-beam experiments. We have tentatively estimated the positron diffusion constant in these semiconductors. The results are compared to values extracted from experiments.

Original languageEnglish
Pages (from-to)267-272
Number of pages6
JournalMaterials Chemistry and Physics
Volume44
Issue number3
DOIs
Publication statusPublished - Jun 1996
Externally publishedYes

Keywords

  • Elemental semiconductors
  • Positrons
  • Work functions

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics

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