Abstract
We have studied the behaviour of the positron in diamond, silicon and germanium by calculating its energy levels at different points of the reciprocal space using the pseudopotential approach coupled with the independent particle approximation. These energies determine quantities, such as the positron and positronium work functions and the deformation potentials, which are important parameters in slow-positron-beam experiments. We have tentatively estimated the positron diffusion constant in these semiconductors. The results are compared to values extracted from experiments.
Original language | English |
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Pages (from-to) | 267-272 |
Number of pages | 6 |
Journal | Materials Chemistry and Physics |
Volume | 44 |
Issue number | 3 |
DOIs | |
Publication status | Published - Jun 1996 |
Externally published | Yes |
Keywords
- Elemental semiconductors
- Positrons
- Work functions
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics